# Library

ARTEMiS/SSN/TSB-RD

# Blocks

# Description

These blocks implement a new generation of Time-Stamped Bridge (TSB) called TSB-RD, RD standing for Real Diodes. These TSB supports interpolation methods of previous generation of TSB. The high-impedance mode and rectifying mode are now implemented with real SPS diode or a combination of SPS switch and thyristors (which are enablable diode in fact). Compared with the previous generation of TSB which implemented high-impedance mode with a zero-current feedback loop, TSB-RD are generally more stable and work with RC snubber of high impedance than previous generation of TSB.

TSB-RD family of blocks is composed of the following 3-phase inverters:

- 2-level
- 3-level neutral-point-clamped
- 3-level T-type

**Dead-time support**

Like previous generation of TSB, TSB-RD blocks supports dead-time smaller than simulation time step (as opposed to SPS inverter models).

**Parallelization capability**

The 2-level TSB-RD is also capable of parallel operation with firing delays between stages.

**TSB-RD recommended usage with SSN**

The TSB-RD are built using real SPS switches, diode and/or thyristor. All 3-phase inverters (2-level, 3-level NPC and 3-level T-type) have 9 internal SPS switches, which is close to the typical limit for pre-calculation methods in real-time systems. The TSB-RD inverters are therefore best used in conjunction with SSN and put each inverter in a unique SSN group.

2-level (left), 3-level NPC(center) and 3-level T-type inverter(right) configurations

# Masks

# Parameters

**Switch conduction resistance (Ohms):** the IGBT/GTO/MOSFET conduction resistance in Ohms.

**Snubber resistance (ohms): **the snubber resistance in ohms.

**Snubber Capacitance (F):** the snubber capacitance in Farads.

*Note: the snubbers are always ‘in circuit’ as they are modeled by SPS components, unlike the previous generation of TSB where snubber was in-circuit only during high-impedance mode.*

**Active Switch Forward Voltage (3-level NPC only):** the IGBT/GTO/MOSFET forward voltage in volts.

**Diode Forward Voltage (3-level NPC only): **the anti-parallel diode forward voltage in volts.

**Parallel TSB option (2-level only):** this option enables the TSB-Rd to work in parallel. In that case, the blocks ‘Itotal’ input of all parallel TSB-RD must be fed with the sum of the ‘Iabc’ from all the TSB-RD.

# Input and Output signals

**Simulink connection points**

** g**: the IGBT/GTO/MOSFET gate input signals. The order of the gate signal for phase A is indicated in Figure 1. Phase B and C are following.

**Iabc**: the inverter output currents in Ampere.

**Itotal**: the total of inverter output currents from all parallel inverters. Used only when ‘Parallel TSB option’ is enabled.

**Physical Modeling connection points**

**A,B,C**: inverter outputs for phases A,B and C.

**V+, Vn, V-**: DC-bus connection points. (**Vn** is the neutral connection point for 3-level inverters only)

# Examples

Detailed examples using 2-level, 3-level NPC, and 3-level T-type inverters are available in the ARTEMiS on-line section ‘TSB-RD (New TSB with real-diodes and dead-time support, used with SSN)’.

The 2-level example is used with the ‘parallel TSB option’.

# References

C. Dufour, J. Mahseredjian , J. Bélanger, “A Combined State-Space Nodal Method for the Simulation of Power System Transients”, IEEE Transactions on Power Delivery, Vol. 26, no. 2, April 2011 (ISSN 0885-8977), pp. 928-935